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| F-4 01/99 NJ14AL Process Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier Rf AMP to 1.0 Ghz Absolute maximum ratings at TA = 25C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150C - 65C to +175C G S-D S-D G Die Size = 0.016" X 0.016" All Round Bond Pads = 0.0028" All Square Bond Pads = 0.004" Substrate is also Gate. Devices in this Databook based on the NJ14AL Process. Datasheet IF140, IF140A IF142 At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance NJ14AL Process Min V(BR)GSS IGSS VGS(OFF) IDSS - 0.5 0.5 10 - 15 Typ - 22 - 2.0 - 100 -7 20 Max Unit V pA V mA Test Conditions IG = - 1 A, VDS = OV VGS = - 10V, VDS = OV VGS = 10V, ID = 1 nA VDS = 10V, VGS = OV gfs Ciss eN 5.5 2.3 0.5 4 mS pF pF VDS = 10V, VGS = OV VDS = 15V, VGS = OV VDS = 15V, VGS = OV f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz Common Source Input Capacitance Equivalent Noise Voltage Common Source Reverse Transfer Capacitance Crss nV/HZ VDS = 10V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-5 NJ14AL Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = 2.2 V Gfs as a Function of VGS(OFF) 10 Transconductance in mS 10 Vgs = O V Drain Current in A 8 Vgs = - 0.5 V 6 Vgs = -1.0 V 4 Vgs = -1.5 V 2 Vgs = -2.0 V 0 5 10 15 20 8 6 4 2 0 -1 -2 -3 -4 -5 -6 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Drain Saturation Current in mA 25 20 15 10 5 Noise Voltage in nV/Hz 6 Noise as a Function of Frequency 4 VDG = 4 V ID = 5 mA 2 0 -1 -2 -3 -4 -5 -6 10 100 1K Frequency in Hz 10K 100K Gate Source Cutoff Voltage in Volts Noise as a Function of Temperature 8 f = 1 kHz f = 100 kHz 4 Input Capacitance in pF Noise Voltage in V/Hz 3.5 3.0 Input Capacitance as a Function of VGS 6 VDS = O V 2.5 VDS = 5 V 2.0 1.5 2 100 150 200 250 300 350 0 -4 -8 - 12 - 16 Temperature (K) Gate Source Voltage in Volts |
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